A strained germanium layer on silicon allows charge to move faster than in any silicon-compatible material to date. This record mobility could lead to chips that run cooler, faster, and with dramatically lower energy consumption. It enhances prospects for silicon-based quantum devices, presumably ones like laptops and smart phones.
warwick.ac.uk/news/pressreleases/scientists-achieve-record-breaking-electrical-conductivity-in-new-quantum-material/